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Baskar, Sam
- Influence of In-Situ Annealing of Si-Rich Silicon Carbide Thin Films
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Authors
Affiliations
1 School of Electronics Engineering, VIT University, Chennai - 600127, Tamil Nadu, IN
2 School of Mechanical and Building Sciences, VIT University, Chennai - 600127, Tamil Nadu, IN
1 School of Electronics Engineering, VIT University, Chennai - 600127, Tamil Nadu, IN
2 School of Mechanical and Building Sciences, VIT University, Chennai - 600127, Tamil Nadu, IN
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Journal of Surface Science and Technology, Vol 34, No 3-4 (2018), Pagination: 116-120Abstract
Si-rich Silicon carbide thin films have grown popularity in the past decade for various opto-electronic applications. Post processing of these thin films at temperature higher than 1000oC usually lead to phase transformations to form Si nanoclusters embedded in amorphous SiC deposited by sputtering on thin films. However, the processing technique is crucial to avoid contaminants, and obtain good quality films. Therefore, a novel in-situ annealing approach within the deposition chamber is carried out at temperatures lower than usual. The influence of in-situ annealing on the material property is meticulously studied by means of Spectroscopic Ellipsometry (SE), Diffused Reflectance Spectroscopy (DRS), and Fourier Transform Infrared Spectroscopy (FTIR). In SE, the spectra are fitted using various models; the refractive index values confirm the Si-richness of the film. The band gap (2.5 to 1.5 eV) is extracted from UV spectra using Tauc plot, which confirms the coexistence of the multiphase structure with the possibility of having Si-NC with different dimensions. The results obtained are promising for optoelectronic device applications.Keywords
In-Situ Annealing, Nanoclusters, Optoelectronics, Silicon Carbide, Spectroscopy.
References
- W. J. Choyke, H. Matsunami and G. Pensl, ‘Silicon Carbide: Recent Major Advances’, 2nd edn. Springer, New York, (2003). PMCid:PMC1180594
- F. Nava, G. Bertuccio, A. Cavallini and E. Vittones, Meas. Sci. Tech., 19, (2008).
- P. M. Sarro, Sensor Actuator Phys., 82, 210 (2000). https:// doi.org/10.1016/S0924-4247(99)00335-0
- J. P. Conde, V. Chu, F. da Silva, A. Kling, Z. Dai, J. C. Soares, S. Arekat, A. Fedorov, M. N. Berberan-Santos F. Giorgis and C. F. Pirri, J. Appl. Phys., 85 (1999).
- L. Gou, C. Qi, J. Ran and C. Zheng, SiC film deposition by DC magnetron sputtering, Thin Solid Films, 345, 42 (1999). https://doi.org/10.1016/S0040-6090(99)00070-X
- A. K. Costa, S. S. Camargo Jr, C. A. Achete and R. Carius, Thin Solid Films, 243 (2000). https://doi.org/10.1016/ S0040-6090(00)01321-3
- M. Mukherjee, Properties and Applications of Silicon Carbide (2011).
- J. Huran, A. Valovic, P. Bohacek, V. N. Shvetsov, A. P Kobzev, S. B. Borzakov, A. Kleinov, M. Sekacova, J. Arbet and V. Sasinková, Appl. Surf. Sci., 269, 88 (2013). https:// doi.org/10.1016/j.apsusc.2012.10.162
- Y. Cao, P. Lu, X. Zhang, J. Xu, L. Xu and K. Chen, Nanoscale Research Letters, 9, 634 (2014). https://doi.org/10.1186/1556-276X-9-634
- J. Moon, S. J. Baik, O. Byungsung, J. C. Lee, Nanoscale, 7, 503 (2012). https://doi.org/10.1186/1556-276X-7-503 PMid:22953733 PMCid:PMC3493276
- Z. Lin, Y. Guo, C. Song, J. Song, X. Wang, Y. Zhang and R. Huang, J. Alloy. Comp., 633, 153 (2015). https://doi.org/10.1016/j.jallcom.2015.02.027
- Q. Cheng, E. Tam, S. Xu, and K. K. Ostrikov, Nanoscale, 2, 594 (2010). https://doi.org/10.1039/b9nr00371a PMid:20644764
- G. Conibeer, The 48th AuSES Annual Conference, 1-3 Dec (2010).
- F. Sohrabi, A. Nikniazi and H. Movla, Intech (2013).
- G. Conibee, M. Green, et al. Thin Solid Films, 511, 654 (2006). https://doi.org/10.1016/j.tsf.2005.12.119
- D. Di and G. Conibeer, M. A. Green, Sol. Energ Mater. Sol. Cell, 94, 2238 (2010). https://doi.org/10.1016/j.solmat.2010.07.018
- L. Mangolini, J. Vac. Sci. Tech. B, 31 (2013).
- E. C. Cho, M. A. Green, G. Conibeer, D. Song, Y. H. Cho, G. Scardera, S. Huang, S. Park, X. J. Hao, Y. Huang and L. Van Dao, Adv. Optoelectron (2007).
- M. A. Green, E.-C. Cho, Y. Cho, et al., ‘All-silicon tandem cells based on “artificial” semiconductor synthesised using silicon quantum dots in a dielectric matrix’, Proceedings of the 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, June, 3 (2005).
- G. Conibeer, M. A. Green, R. Corkish, et al., Thin Solid Films, 511-512, 654–662 (2006). https://doi.org/10.1016/j.tsf.2005.12.119
- M. Künle, S. Janz, K. G. Nickel, A. Heidt, M. Luysberg and O. Eibl, Sol. Energ. Mater. Sol. Cell., 115, 11(2013). https:// doi.org/10.1016/j.solmat.2013.03.011
- J. Lopez-Vidrier, S. Hernández, J. Samà, M. Canino, M. Allegrezza, M. Bellettato, R. Shukla, M. Schnabel, P. Löper, L. López-Conesa, S. Estradé, F. Peiró, S. Janz, and B. Garrido, Mater. Sci. Eng. B, 178, 639 (2012). https://doi.org/10.1016/j.mseb.2012.10.015
- Y. Rui, S. Li, Y. Cao, J. Xu, W. Li and K. Chen, Appl. Surf. Sci., 269, 37 (2013). https://doi.org/10.1016/j.apsusc.2012.09.118
- M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt and J. Bläsing, Appl. Phys. Lett., 80, 661 (2002). https://doi.org/10.1063/1.1433906
- F. Gourbilleau, X. Portier, C. Ternon, P. Voivenel, R. Madelon and R. Rizk, Appl. Phys. Lett., 78 (2001). https:// doi.org/10.1063/1.1371794
- X. Chen and P. Yang, J. Mater. Sci.: Mater. Electron., 26, 4604 (2015). https://doi.org/10.1007/s10854-015-3147-4
- C.-H. Liang, O. Debieu, Y.-T. An, L. Khomenkova, J. Cardin, et al, J. Lumin., 132, 3118 (2012). https://doi.org/10.1016/j.jlumin.2012.01.046
- G. A. Niklasson, C. G. Granqvist and O. Hunderi, Appl. Optic., 20 (1981).
- K. Nishida, K. Ono and K. Eriguchi, Jpn. J. Appl. Phys., 56 (2017).
- R. Shukla, C. Summonte, M. Canino, M. Allegrezza, M. Bellettato, A. Desalvo, D. Nobili, S. Mirabella, N. Sharma, M. Jangir and I. P. Jain, Adv. Compos. Lett., 3, 297(2012).
- S. Baskar and R. Pratibhanalini, Materials Today: Proceedings, 3, 2121 (2015).
- R. Monga, S. K. Gupta and R. P. Nalini, Int. J. Innovat. Appl. Stud., 8, 107 (2014).
- A. V. Vasin, Y. Ishikawa, A. V. Rusavsky, A. N. Nazarov, A. A. Konchitz and V. S. Lysenko, Quantum Electronics and Optoelectronics, 18, 63 (2015). https://doi.org/10.15407/spqeo18.01.063
- L. Tong, M. Mehregany and W. C. Tang, ‘Amorphous Silicon Carbide Films by Plasma-Enhanced Chemical Vapor Deposition, Micro Electro Mechanical Systems’, IEEE MEMS ‘93, Proceedings An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (1993).
- Y.-H. Joung, H. I. Kang, J. H. Kim, H.-S. Lee, J. Lee and W. S. Choi, Nanoscale Research Letters, 7, 22 (2012). https://doi.org/10.1186/1556-276X-7-22 PMid:22221730 PMCid:PMC3276418
- F. Gourbilleau, C. Ternon, D. Maestre, O. Palais, and C. Dufour, J. Appl. Phys., 106 (2009). https://doi.org/10.1063/1.3156730
- C.-T. Lee, L.-H. Tsai, Y.-H. Lin, G.-R. Lin, ECS J. Solid State Sci. Technol., 1, Q144 (2012). https://doi.org/10.1149/2.005301jss
- Q. Cheng, S. Xu, K. Ostrikov, Acta Mater., vol. 58, no. 2, pp. 560, (2010). https://doi.org/10.1149/2.005301jss
- D. A. Zimnyakov, A. V. Sevrugin, S. A. Yuvchenko, F. S.Fedorov, E. V. Tretyachenko, M. A. Vikulova, D. S. Kovaleva, E. Y. Krugova and A. V. Gorokhovsky, Data in Brief, 71383 (2016).
- M. Allegrezza, F. Gaspari, M. Canino, M. Bellettato, Desalvo, C. Summonte, Thin Solid Films, 556, 105 (2014). https://doi.org/10.1016/j.tsf.2014.01.025
- A. Kole, P. Chaudhuri, Thin Solid Films, 522, 45 (2012). https://doi.org/10.101https://doi.org/10.1016/j.tsf.2012.02.0786/j.tsf.2014.01.025
- Synthesis and Characterization of a-SixCy Thin Films Prepared by RF Magnetron Co-Sputtering Technique
Abstract Views :241 |
PDF Views:0
Authors
Affiliations
1 School of Electronics Engineering, VIT University, Chennai – 600127, Tamil Nadu, IN
2 CIMAP CNRS/CEA/ENSICAEN/Normandie Université 6 Bd Maréchal Juin, 14050 Caen Cedex 4, FR
3 School of Mechanical and Building Sciences, VIT University, Chennai – 600127, Tamil Nadu, IN
1 School of Electronics Engineering, VIT University, Chennai – 600127, Tamil Nadu, IN
2 CIMAP CNRS/CEA/ENSICAEN/Normandie Université 6 Bd Maréchal Juin, 14050 Caen Cedex 4, FR
3 School of Mechanical and Building Sciences, VIT University, Chennai – 600127, Tamil Nadu, IN
Source
Journal of Surface Science and Technology, Vol 35, No 3-4 (2019), Pagination: 107-113Abstract
Si-C based alloys have attracted much attention due to their potential applications in electronic and optical devices. In this paper, a-SixCy thin films with different Silicon (Si) content are obtained by sputtering of SiC; co-sputtering of SiC and Si targets at different deposition temperatures (Td) such as 200oC, 350oC and 500oC. It is annealed at various annealing temperature (Ta) using conventional thermal annealing (CTA) and Rapid Thermal Annealing (RTA) techniques. The effect of excess Si incorporation and the unintentional oxidation during various stages of sample preparation are discussed. Their structural and optical properties are investigated using spectroscopic ellipsometry, X-Ray Diffraction spectroscopy (XRD), and Fourier Transform Infrared spectroscopy (FTIR). The refractive index value (n1.95eV) varies between 1.6 to 3.6, suggesting the transition from porous silicon carbide to Si-rich silicon carbide or silicon oxycarbide upon increasing Td and Ta, which is also supported by the FTIR spectra. The emergence of absorption peak between ~950 cm−1 and 1100 cm−1 with the increase of Ta and excess silicon is attributed to Si-O a stretching vibration bond which is an indication of Si richness and unintentional oxidation during annealing. Detailed analysis on the process parameters and the evolution of phase transformations are discussed.Keywords
Annealing, Si-Rich Silicon carbide, Sputtering, Thin Films.References
- W. J. Choyke, H. Matsunami and G. Pensl, ‘Silicon Carbide: Recent Major Advances’, 2nd Edn. Springer, New York, (2003). PMCid:PMC1180594
- F. Nava, G. Bertuccio, A. Cavallini and E. Vittones, Meas. Sci. Tech., 19, 102001 (2008). https://doi.org/10.1088/09570233/19/10/102001
- P. M. Sarro, Sensor. Actuator. Phys., 82, 210 (2000). https:// doi.org/10.1016/S0924-4247(99)00335-0
- J. P. Conde, V. Chu, F. Da Silva, A. Kling, Z. Dai, J. C. Soares, S. Arekat, A. Fedorov, M. N. Berberan-Santos F. Giorgisand C. F. Pirri, J. Appl. Phys., 85, 3327 (1999).
- L. Gou, C. Qi, J. Ran, and C. Zheng, Thin Solid Films, 345, 42 (1999). https://doi.org/10.1016/S0040-6090(99)00070-X 6. A. K. Costa, J. R.Camargo, S. S. Achete and C.A. Carius, Thin Solid Films, 243, 377 (2000)
- R. Gerhardt, ‘Silicon carbide based transit time devices’, Moumita Mukherjee: ‘The New Frontier in High-power THz Electronics, in InTech, (2011).
- J. Huran, A.Valovič, P. Boháček, V.N Shvetsov, A.P. Kobzev, S.B. Borzakov, A. Kleinov, M.Sekáčová, J.Arbet, and V. Sasinková, Appl. Surf. Sci., 269, 88 (2013). https://doi.org/10.1016/j.apsusc.2012.10.162
- A. Karakuscu, A. Ponzoni, P. R. Aravind, G. Sberveglieri, G. D. Soraru, J. Am. Ceram. Soc., 96, 2366 (2013). https://doi.org/10.1111/jace.12491
- M. Wilamowska-Zawlocka, P. Puczkarski, Z. Grabowska, J. Kaspar, M. Graczyk-Zajac, R. Riedel and G. D. Soraru, RSC Adv., 6, 104597 (2016).
- S. Gallis, V. Nikas and A. E. Kaloyeros, ‘Modern Technologies for Creating the Thin-film Systems and Coatings’: Silicon Oxycarbide Thin films and Nanostructures: Synthesis, Properties and Applications, InTech (2006). PMCid:PMC3660141
- J. Y. Fan, X. L. Wu and K. P. K. Chu, Progr. Mater. Sci., 51, 983 (2006). https://doi.org/10.1016/j.pmatsci.2006.02.001
- M. A.Ouadfel, A. Keffous, A. Brighet, N. Gabouze, T. Hadjersi, A. Cheriet, M. Kechouane, A. Boukezzata, Y. Boukennous, Y. Belkacem and H. Menari, Appl. Surf. Sci., 265, 94 (2013). https://doi.org/10.1016/j.apsusc.2012.10.129
- D. Song, E. C. Cho, Y. H. Cho, G. Conibeer, Y. Huang, S. Huang and M. A. Green, Thin Solid Films, 516, 3824 (2008). https://doi.org/10.1016/j.tsf.2007.06.150
- M. Künle, T. Kaltenbach, P. Löper, A. Hartel, S. Janz, O. Eibl and K. G. Nickel, Thin Solid Films, 519, 151 (2010). https:// doi.org/10.1016/j.tsf.2010.07.085
- M.Yazdanfar, H. Pedersen, P. Sukkaew, I. G. Ivanov, Ö. Danielsson, O. Kordina and E. Janzén, J. Cry Grow., 390, 24 (2014).
- F. Maury, J. M. Agullo, J. Sur and Coat Tech., 1, 19 (1995).
- E. Pascual, J. L. Andlijar, E. Fernhndez and E. Bertran, J. Dia. Rel. Mat., 4, 1205, (1995) https://doi.org/10.1016/0925-9635(95)00296-0
- C. Iliescu and D. P. Poenar, ‘Physics and Technology of Silicon Carbide Devices Solution. Chapter 5., PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications’, InTech, (2013).
- M. Quadfel, C. Yaddaden, S. Merazga, Cheriet, L. Talb, S. Kaci and H. Menari, J. Alloy Comp, 579, 365 (2013).
- N. Ledermann, J. Baborowski, P. Muralt, N. Xantopoulos and J. M. Tellenbach, J. Sur. and Coat Tech., 125, 246 (2000).
- S. S. Baskar and R. P. Nalini, Mater. Today, 3, 2121 (2016). https://doi.org/10.1016/j.matpr.2016.04.117
- H. S. Medeiros, R. S. Pessoa, J. C. Sagás, M. A. Fraga, L. V. Santos, H. S. Maciel, M. Massi, and A. S. Da Silva Sobrinho, Mater. Sci. Forum., 717-720, 197, (2012). https://doi.org/10.4028/www.scientific.net/MSF.717-720.197
- J. López-vidrier, S. Hernández, J. Samà, M. Canino, M. Allegrezza and M. Bellettato, J. Mater. Sci. Eng. B., 178(9), 639 (2013). https://doi.org/10.1016/j.mseb.2012.10.015
- Y. Rui, S. Li, Y. Cao, J. Xu, W. Li and K. Chen, J. App Sur Sci, 269, 37 (2013).
- J. Moon, S. J. Baik, O. Byungsung and J. C. Lee, J. Nanoscale Res Lett, 7, 503, (2012). https://doi.org/10.1186/1556276X-7-503 PMid:22953733 PMCid:PMC3493276
- R. Gradmann, P. Loeper, M. Künle, M. Rothfelder, S. Janz, M. Hermle, and S. Glunz, Phys. Status. Solidi. C., 8(3), 831 (2011) https://doi.org/10.1002/pssc.201000176
- Y. Peng, J. Zhou, X. Zheng, B. Zhao and X. Tan, J. Mod Phy B, 25(22), 2983 (2011). https://doi.org/10.1142/S0217979211100412
- J. Fan, H. Li, J. Wang and M. Xiao, Appl. Phys. Lett., 101, 131906, 6 (2012).
- G. Scardera, T. Puzzer, G. Conibeer, and M. A. Green, J. Appl. Phys.,104, 10, (2008). https://doi.org/10.1063/1.3021158
- F. Demichelis, Phys. B Condens. Matter., 205,169 (1995). https://doi.org/10.1016/0921-4526(94)00233-L
- S. Janz, ‘Amorphous Silicon Carbide for Photovoltaic Applications’, in KOPS - The Institutional Repository of the University of Konstanz, 1–227, (2006).
- Q. Cheng, S. Xu and K. Ostrikov, Acta. Mater., 58(2), 560 (2010). https://doi.org/10.1016/j.actamat.2009.09.034
- A. Kole and P. Chaudhuri, Thin Solid Films, 522, 45 (2012). https://doi.org/10.1016/j.tsf.2012.02.078
- G. Chang, F. Ma, D. Ma and K. Xu, Nanotechnology, 21, 465605 (2010). https://doi.org/10.1088/0957-4484/21/46/465605 PMid:20975214
- X. J. Hao, E.-C. Cho, G. Scardera, Y. S. Shen, E. BelletAmalric, D. Bellet, G. Conibeer and M. A. Green, Sol. Energ. Mater. Sol. Cell., 93, 1524 (2009). https://doi.org/10.1016/j.solmat.2009.04.002
- G. Wen, X. Zeng, W. Liao and C. Cao, Thin Solid Films, 552, 18 (2014). https://doi.org/10.1016/j.tsf.2013.12.001
- T. Rajagopalan, X. Wang, B. Lahlouh, C. Ramkumar, P. Dutta and S. Gangopadhyay, J. Appl. Phy., 94, 5252 (2003). https://doi.org/10.1063/1.1609631
- K. Surana, H. Lepage, J. M. Lebrun, B. Doisneau, D. Bellet, L. Vandroux, G. Le Carval, M. Baudrit, P. Thony and P. Mur, Nanotechnology, 23, 105401 (2012). https://doi.org/10.1088/0957-4484/23/10/105401 PMid:22348886
- S. W. King, M. French, J. Bielefeld and W. A. Lanford, J. Non. Cryst. Solids, 357, 2970 (2011). https://doi.org/10.1016/j.jnoncrysol.2011.04.001
- S. Kerdiles, A. Berthelot, F. Gourbilleau and R. Rizk, Appl. Phys. Lett., 76, 24 (2000). https://doi.org/10.1063/1.126350
- S. Yamada, Y. Kurokawa, S. Miyajima and M. Konagai, Nanoscale Research Letters, 9, 246 (2014) https://doi.org/10.1186/1556-276X-9-246
- D. Krcho, ‘FTIR Spectroscopy for Silicon Solar Cell’ in Characterisation Proceedings of Solar ‘97 - Australian and New Zealand Solar Energy Society (1997).